Comparison between monomethyl hydrazine and ECR plasma activated nitrogen as a nitrogen source for CBE growth of GaN

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 81-85

  Yonemura, S ^a   Yaguchi, T ^a   Tsuchiya, H ^a   Shimoyama, N ^b   Suemasu, T ^a   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TRI Chemical Laboratory Inc   (Japan)

Author keywords

CBE; Contamination; ECR plasma; GaN; Growth rate; Monomethyl hydrazine

Indexed keywords

CARBON; CONTAMINATION; ELECTRON CYCLOTRON RESONANCE; HYDRAZINE; NITROGEN; OXYGEN; PLASMA SOURCES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; MONOMETHYL HYDRAZINE; PLASMA GUN STRUCTURE;

CHEMICAL BEAM EPITAXY;

EID: 0032096793     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00078-5     Document Type: Article

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