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Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 345-355

Directional dependence of InAs island formation on patterned GaAs

(5) Miller, Mark S a Jeppesen, Søren a Kowalski, Bernhard a Maximov, Ivan a Samuelson, Lars a

a LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; DEPOSITION; ELECTRONIC STRUCTURE; LITHOGRAPHY; MASS TRANSFER; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

INDIUM ARSENIDE; ISLAND FORMATION; MASS TRANSPORT; STRANSKI-KRASTANOV GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0030195653 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00028-0 Document Type: Article

Times cited : (3)

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