Photoluminescence quenching effect on porous silicon films for gas sensors application

Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy

Volumn 60, Issue 5, 2004, Pages 1065-1070

  Salcedo, Walter Jaimes ^a   Fernandez, Francisco Javier Ramirez ^a   Rubim, Joel C ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITY OF BRASILIA   (Brazil)

Author keywords

Molecular electronic; Optical sensor; Porous silicon; Quenching effect

Indexed keywords

ADSORPTION; ANISOTROPY; ELECTRIC CONDUCTIVITY; FREE ENERGY; LIGHT POLARIZATION; MATHEMATICAL MODELS; OPTICAL SENSORS; PHOTOLUMINESCENCE; POROUS SILICON; QUENCHING; RAMAN SPECTROSCOPY;

MOLECULAR ELECTRONICS; QUENCHING EFFECTS;

CHEMICAL SENSORS;

SILICON; SILICON DERIVATIVE;

ADSORPTION; ARTICLE; CELL NUCLEUS; CHEMISTRY; ELECTRON; GAS; GENETIC RECOMBINATION; LASER; LIGHT; LUMINESCENCE; METABOLISM; METHODOLOGY; NORMAL DISTRIBUTION; PHOTON; RAMAN SPECTROMETRY; SPECTROPHOTOMETRY; THERMODYNAMICS;

ADSORPTION; CELL NUCLEUS; ELECTRONS; GASES; LASERS; LIGHT; LUMINESCENT MEASUREMENTS; NORMAL DISTRIBUTION; PHOTONS; RECOMBINATION, GENETIC; SILICON; SILICON COMPOUNDS; SPECTROPHOTOMETRY; SPECTRUM ANALYSIS, RAMAN; THERMODYNAMICS;

EID: 1842832018     PISSN: 13861425     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-1425(03)00338-X     Document Type: Article

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