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Volumn 68, Issue 1, 2000, Pages 210-217

Novel surface-micromachined capacitive porous silicon humidity sensor

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; DIELECTRIC MATERIALS; ELECTROCHEMICAL ELECTRODES; FABRICATION; POROUS SILICON; RESISTORS; VAPORS; WATER;

EID: 0034247981     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00431-7     Document Type: Article
Times cited : (141)

References (22)
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    • (1995) Sens. Actuators, B , vol.23 , pp. 135-156
    • Traversa, E.1
  • 7
    • 0030233401 scopus 로고    scopus 로고
    • Humidity sensitive field effect transistors
    • Lee S.P., Park K.J. Humidity sensitive field effect transistors. Sens. Actuators, B. 35-36:1996;80-84.
    • (1996) Sens. Actuators, B , vol.3536 , pp. 80-84
    • Lee, S.P.1    Park, K.J.2
  • 8
    • 0006503581 scopus 로고
    • London: Chapman & Hall
    • Penman H.L. Humidity. 1955;Chapman & Hall, London.
    • (1955) Humidity
    • Penman, H.L.1
  • 9
    • 0022813956 scopus 로고
    • Humidity sensors: Principles and applications
    • Yamazoe N., Shimizu Y. Humidity sensors: principles and applications. Sens. Actuators. 10:1986;379-398.
    • (1986) Sens. Actuators , vol.10 , pp. 379-398
    • Yamazoe, N.1    Shimizu, Y.2
  • 10
    • 0023399179 scopus 로고
    • Humidity sensing at high temperatures
    • Heber K.V. Humidity sensing at high temperatures. Sens. Actuators. 12:1987;145-157.
    • (1987) Sens. Actuators , vol.12 , pp. 145-157
    • Heber, K.V.1
  • 12
    • 21544444504 scopus 로고
    • An experimental and theoretical study of the formation and microstructure of porous Si
    • Beale M.I.J., Benjamin J.D., Uren M.J., Chew N.G., Cullis A.G. An experimental and theoretical study of the formation and microstructure of porous Si. J. Crystal Growth. 73:1985;622-636.
    • (1985) J. Crystal Growth , vol.73 , pp. 622-636
    • Beale, M.I.J.1    Benjamin, J.D.2    Uren, M.J.3    Chew, N.G.4    Cullis, A.G.5
  • 14
    • 0000830695 scopus 로고
    • Anodic dissolution of p- And n-type silicon. Kinetic study of the chemical mechanism
    • Eddowes M.J. Anodic dissolution of p- and n-type silicon. Kinetic study of the chemical mechanism. J. Electroanal. Soc. 280:1990;297-311.
    • (1990) J. Electroanal. Soc. , vol.280 , pp. 297-311
    • Eddowes, M.J.1
  • 15
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication and chemical dissolution of wafers
    • Canham L.T. Silicon quantum wire array fabrication and chemical dissolution of wafers. Appl. Phys. Lett. 57:1990;1046-1048.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 1046-1048
    • Canham, L.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.