A new line shape analysis of Raman emission in porous silicon

Thin Solid Films

Volumn 297, Issue 1-2, 1997, Pages 122-124

  Brunetto, N ^a   Amato, G ^a  

^a ISTITUTO ELETTROTECNICO NAZIONALE GALILEO FERRARIS   (Italy)

Author keywords

Computer simulation; Porous silicon; Raman scattering; Transmission electron microscopy

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; LIGHT EMISSION; MONTE CARLO METHODS; RAMAN SCATTERING; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLITE SIZES; LINE SHAPE ANALYSIS; RAMAN EMISSION;

POROUS SILICON;

EID: 0031117120     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09363-7     Document Type: Article

References (6)

1. H. Richter, Z.P. Wang and L. Ley, Solid State Commun., 39 (1981) 625.
2. Z. Iqbal and S. Veprek, J. Phys. C: Solid State Phys., 15 (1982) 377.
3. I.H. Campbell and P.M. Fauchet, Solid State Commun., 58 (1986) 739.
4. H. Münder, C. Andrzejak, M.G. Berger, U. Klemradt, H. Lüdt, R. Herino and M. Ligeon, Thin Solid Films, 221 (1992) 27.
5. Y. Kanemitsu, J. Phys. Soc. Jpn., 63 (suppl. B) (1994) 107.
6. G. Amato, N. Brunetto and A. Parisini, Thin Solid Films, in press.