Conduction and valence band edges of porous silicon determined by electron transfer

Journal of the American Chemical Society

Volumn 118, Issue 18, 1996, Pages 4490-4491

  Rehm, Julie M ^a   McLendon, George L ^b   Fauchet, Philippe M ^c  

^a UNIVERSITY OF ROCHESTER   (United States)

^b PRINCETON UNIVERSITY   (United States)

^c University of Rochester   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONITRILE; NITROBENZENE DERIVATIVE; SILICON;

ARTICLE; ELECTROCHEMISTRY; ELECTRON TRANSPORT; ENERGY TRANSFER; LUMINESCENCE; NONHUMAN; OXIDATION REDUCTION POTENTIAL;

EID: 15844406943     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja9538795     Document Type: Article

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21. For the reasons discussed in the text, the band gap deduced by using benzene as the solvent may be subject to corrections that are difficult to calculate but can only increase the value of the band gap. Our value of 2.6 eV for the band gap cannot underestimate the true band gap by more than ∼0.2 eV since the steady-state luminescence experiments were performed with an excitation wavelength of 450 nm (photon energy of 2.75 eV). If the band gap were larger than 2.75 eV, electron-hole pairs would not be generated, and no luminescence could be detected.