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Volumn 118, Issue 18, 1996, Pages 4490-4491

Conduction and valence band edges of porous silicon determined by electron transfer

Author keywords

[No Author keywords available]

Indexed keywords

ACETONITRILE; NITROBENZENE DERIVATIVE; SILICON;

EID: 15844406943     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja9538795     Document Type: Article
Times cited : (62)

References (21)
  • 7
    • 84889502412 scopus 로고    scopus 로고
    • California Institute of Technology, private communication
    • Nathan Lewis. California Institute of Technology, private communication.
    • Lewis, N.1
  • 8
    • 84889555898 scopus 로고    scopus 로고
    • See the supporting information for more details
    • See the supporting information for more details.
  • 21
    • 84889528642 scopus 로고    scopus 로고
    • note
    • For the reasons discussed in the text, the band gap deduced by using benzene as the solvent may be subject to corrections that are difficult to calculate but can only increase the value of the band gap. Our value of 2.6 eV for the band gap cannot underestimate the true band gap by more than ∼0.2 eV since the steady-state luminescence experiments were performed with an excitation wavelength of 450 nm (photon energy of 2.75 eV). If the band gap were larger than 2.75 eV, electron-hole pairs would not be generated, and no luminescence could be detected.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.