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Patt, B.E.1
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48549113488
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Semiconductor Drift Chamber - An Application of a Novel Charge Transport Scheme
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Large Area Cylindrical Silicon Drift Detector
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0030259610
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Simulation and Modeling of a New Silicon Drift Chamber X-ray Detector Design for Synchrotron Radiation Applications
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J.S. Iwanczyk, B.E. Patt, G. Vilkelis, L. Rehn, J. Metz, B. Hedman & K. Hodgson, "Simulation and Modeling of a New Silicon Drift Chamber X-ray Detector Design for Synchrotron Radiation Applications", Nucl. Instr. & Meth. in Phys. Res. A380 (1996) 288-294.
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0032167101
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A New Structure for Controlling Dark Current Due to Surface Generation in Drift Detectors
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J. Segal, B.E. Patt, J.S. Iwanczyk, G. Vilkelis, J. Plummer, B. Hedman and K.O. Hodgson "A New Structure for Controlling Dark Current Due to Surface Generation in Drift Detectors," Nucl. Instr. & Meth in Phys. Res A414 (1998) 307.
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J.S. Iwanczyk, B.E. Part, C.R. Tull, and L.M. MacDonald, "Novel x-ray and gamma-ray drift detectors based on silicon and compound semiconductors", Proceedings of SPIE, Vol. 3768 (1999) 249-260.
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Long Beach, CA. Aug. 11-15
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J.S. Iwanczyk, Bradley E. Patt, Carolyn R. Tull, and Shaul Barkan, "High Throughput, Large Area, Silicon X-ray Detector for High Resolution Spectroscopy Applications", Proceedings of the Microscopy and Microanalysis 2001 Conference, Long Beach, CA. Aug. 11-15, 2001.
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New pixel detector concepts based on junction field effect transistors on high resistivity silicon
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