A new structure for controlling dark current due to surface generation in drift detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 414, Issue 2-3, 1998, Pages 307-316

  Segal, J D ^a   Patt, B E ^b   Iwanczyk, J S ^b   Vilkelis, G ^c   Plummer, J D ^d   Hedman, B ^e   Hodgson, K O ^e  

^a HPL Technologies Inc   (United States)

^b Photon Devices   (United States)

^c Stanford University ^*  (United States)

^d Stanford University   (United States)

^e SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Cylindrical; Detector; Drift; Silicon; X ray

Indexed keywords

ANODES; ATOMS; DETECTORS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); SURFACES; X RAYS;

DARK CURRENT; DRIFT DETECTORS; SURFACE GENERATION; X RAY ABSORPTION SPECTROSCOPY;

X RAY SPECTROSCOPY;

EID: 0032167101     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00570-1     Document Type: Article

References (8)

1. J.S. Iwanczyk, B.E. Patt, J. Segal, J. Plummer, G. Vilkelis, B. Hedman, K.O. Hodgson, A.D. Cox, L. Rehn, J. Metz, Nucl. Instr. and Meth. A 380 (1996) 288.
2. J. Segal, J. Plummer, C. Kenney, Simulation of charge cloud evolution in silicon drift detectors, Proc. 1996 IEEE Nuclear Science Symp., p. 558.
3. J.D. Segal, C.H. Aw, J.D. Plummer, C. Kenney, S.I. Parker, G. Vilkelis, J.S. Iwanczyk, B.E. Patt, A vertical high voltage termination structure for high-resistivity silicon detectors, IEEE Trans. Nucl. Sci. 45(3) (1998) 364.
4. W. Chen et al., IEEE Trans. Nucl. Sci. 41 (4) (1994) 941.
5. P. Rehak et al., IEEE Trans. Nucl. Sci. 36 (1) (1989) 203.
6. S. Holland, Nucl. Instr. and Meth. A 305 (1991) 541.
7. W. Snoeys et al., IEEE Trans. Electron Devices 41 (6) (1994) 903.
8. B.E. Patt, J.S. Iwanczyk, G. Vilkelis, J. Segal, J.D. Plummer, B. Hedman, K.O. Hodgson, Appl. Phys. Lett., 1997, submitted.