New pixel detector concepts based on junction field effect transistors on high resistivity silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 521-528

  Cesura, G ^a   Findeis, N ^b   Hauff, D ^a   Hornel N ^a   Kemmer, J ^b   Klein, P ^a   Lechner, P ^a   Lutz, G ^a   Richter, R H ^a   Seitz, H ^a  

^a 53113 Bonn   (Germany)

^b KETEK GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; AMPLIFIERS (ELECTRONIC); ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); HIGH ENERGY PHYSICS; IONIZATION OF SOLIDS; RADIATION DETECTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CONTINUOUS RESET; HIGH OHMIC SILICON SUBSTRATE; HIGH RESISTIVITY SILICON; INTERNAL CHARGE AMPLIFICATION; PIXEL DETECTOR; PULSED RESET; SIGNAL PERFORMANCE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0030214707     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00236-7     Document Type: Article

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6. P.F. Manfredi et al., Rev. Sci. Instr. 12 (1994) 65.
7. J.L. Chu et al., J. Appl. Phys. 43 (1972) 3510.