Compensation of CdTe by doping with gallium

Crystal Research and Technology

Volumn 36, Issue 6, 2001, Pages 535-542

  Babentsov, V ^a,c   Corregidor, V ^a   Castano J L ^a   Fiederle, M ^b   Feltgen, T ^b   Benz, K W ^b   Dieguez E ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSITY OF FREIBURG   (Germany)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

CdTe; Compensation; Ga doping; Resistivity map

Indexed keywords

CADMIUM COMPOUNDS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM; MARKOV PROCESSES; MATHEMATICAL MODELS; MICROSTRUCTURE; PHOTOLUMINESCENCE; STATISTICAL METHODS;

CADMIUM TELLURIDE; FERMI STATISTIC MODEL; GALLIUM DOPING; RESISTIVITY MAP;

SINGLE CRYSTALS;

EID: 0034904279     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200107)36:6<535::AID-CRAT535>3.0.CO;2-R     Document Type: Article

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