Strength of silicon containing nanoscale flaws

Journal of Materials Research

Volumn 19, Issue 2, 2004, Pages 657-660

  Pajares, Antonia ^a,b   Chumakov, Marina ^a,c   Lawn, Brian R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF EXTREMADURA   (Spain)

^c Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACK INITIATION; DEGRADATION; FUNCTIONS; MICROELECTROMECHANICAL DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; OPTICAL FIBERS; STRESS CONCENTRATION;

NANOELECTROMECHANICAL SYSTEMS (NEMS); NANOINDENTATION;

SILICON WAFERS;

EID: 1842665127     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2004.19.2.657     Document Type: Article

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