Promising characteristics of GaN layers grown on amorphous silica substrates by gas-source MBE

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 218-222

  Iwata, K ^a   Asahi, H ^a   Asami, K ^a   Ishida, A ^a   Kuroiwa, R ^a   Tampo, H ^a   Gonda, S ^a   Chichibu, S ^b  

^a OSAKA UNIVERSITY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

GaN; Gas source MBE; Glass substrate; PL; PLE; Polycrystal; Stokes shift

Indexed keywords

AMORPHOUS SILICON; ELECTRON CYCLOTRON RESONANCE; ELECTRON EMISSION; EXCITONS; FUSED SILICA; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GLASS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY; STOKES SHIFT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18744434271     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00229-2     Document Type: Article

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