Monolithically integrated HgCdTe focal plane arrays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5209, Issue , 2003, Pages 14-32

  Velicu, S ^a   Lee, T S ^a   Ashokan, R ^a   Grein, C H ^a   Boieriu, P ^b   Chen, Y P ^b   Dinan, J ^c   Lianos, D ^d  

^a Smart Pixel Inc   (United States)

^b EPIR TECHNOLOGIES INC   (United States)

^c NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^d US Army Space and Missile Defense Command   (United States)

Author keywords

CdTe Si; FTIR; Hall; HgCdTe; Lifetime; MBE; Monolithic; RHEED; ROIC

Indexed keywords

CRYSTALLOGRAPHY; CURRENT VOLTAGE CHARACTERISTICS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SENSORS; SUBSTRATES; THERMAL EXPANSION;

DETECTOR ARRAYS; FOCAL PLANE ARRAYS (FPA);

MERCURY COMPOUNDS;

EID: 1842530434     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504038     Document Type: Conference Paper

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