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Volumn 6, Issue 5-6, 2003, Pages 473-476

SEM observation of InP/ErP/InP double heterostructures grown on InP(0 0 1), InP(1 1 1)A, and InP(1 1 1)B

Author keywords

ErP; InP(0 0 1); InP(1 1 1) B; InP(1 1 1)A; OMVPE; SEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; ERBIUM COMPOUNDS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHASE TRANSITIONS; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 1842483857     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.07.032     Document Type: Conference Paper
Times cited : (1)

References (15)
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    • Tanaka, M.1    Tsuda, M.2    Nishinaga, T.3    Palmstrøm, C.J.4
  • 3
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    • xAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors
    • xAs/GaAs heterostructures. a demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors Appl Phys Lett. 56:1990;382-384.
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    • Palmstrøm, C.J.1    Mounier, S.2    Finstad, T.G.3    Miceli, P.F.4
  • 9
    • 0031271208 scopus 로고    scopus 로고
    • Formation of ErP Islands on InP(0 0 1) Surface by organometallic vapor phase epitaxy
    • Bolotov L., Tsuchiya J., Fujiwara Y., Takeda Y., Nakamura A. Formation of ErP Islands on InP(0. 0 1) Surface by organometallic vapor phase epitaxy Jpn J Appl Phys. 36:1997;L1534-L1537.
    • (1997) Jpn J Appl Phys , vol.36 , pp. 1534-L1537
    • Bolotov, L.1    Tsuchiya, J.2    Fujiwara, Y.3    Takeda, Y.4    Nakamura, A.5
  • 10
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    • Semimetal to semiconductor transition in ErP islands grown on InP(0 0 1) due to quantum-size effects
    • Bolotov L., Tsuchiya T., Nakamura A., Ito T., Fujiwara Y., Takeda Y. Semimetal to semiconductor transition in ErP islands grown on InP(0. 0 1) due to quantum-size effects Phys Rev B. 59:1999;12236-12239.
    • (1999) Phys Rev B , vol.59 , pp. 12236-12239
    • Bolotov, L.1    Tsuchiya, T.2    Nakamura, A.3    Ito, T.4    Fujiwara, Y.5    Takeda, Y.6
  • 15
    • 0017908059 scopus 로고
    • Stacking fault energy and ionicity of cubic III-V compounds
    • Gottschalk H., Patzer G., Alexande H. Stacking fault energy and ionicity of cubic III-V compounds. Phys Stat Sol (a). 45:1978;207-217.
    • (1978) Phys Stat Sol (a) , vol.45 , pp. 207-217
    • Gottschalk, H.1    Patzer, G.2    Alexande, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.