Formation of ErP islands on InP(001) surface by organometallic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 11 SUPPL. B, 1997, Pages

  Bolotov, Leonid ^a,b   Tsuchiya, Junji ^a   Fujiwara, Yasufumi ^a   Takeda, Yoshikazu ^a   Nakamura, Arao ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Atomic force microscopy; Organometallic vapor phase epitaxy; Quantum dot; Semimetal semiconductor interface; Strained film; Surface morphology; Two dimensional island

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; ERBIUM COMPOUNDS; INTERFACES (MATERIALS); METALLOIDS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THERMAL EFFECTS;

SEMIMETAL SEMICONDUCTOR INTERFACES;

FILM GROWTH;

EID: 0031271208     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1534     Document Type: Article

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