Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1467-1470

  Lee, P P ^a   Hwu, R J ^a   Sadwick, L P ^a   Balasubramaniam, H ^a   Kumar, B R ^a   Lai, T C ^a   Chu, S N G ^b   Alvis, R ^c   Lareau, R T ^d   Wood, M C ^d  

^a Department of Electrical and Computer Engineering   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038473764     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589967     Document Type: Article

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