Defects study by photoluminescence and cathodoluminescence in vanadium doped CdZnTe

Journal of Crystal Growth

Volumn 161, Issue 1-4, 1996, Pages 286-291

  Rzepka, E ^a   Lusson, A ^a   Riviere, A ^a   Aoudia, A ^a   Marfaing, Y ^a   Triboulet, R ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SPECTROSCOPY; VANADIUM;

CADMIUM TELLURIDE; DONOR ACCEPTOR PAIR; HIGH ENERGY EXCITON LINES;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030123396     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00672-9     Document Type: Article

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