A quasi 2-dimensional model for thyristor based devices

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2001, Pages 1510-1515

  Detjen, D ^a   Schroder S ^a   Von Bloh, J ^a   De Doncker, R W ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; FINITE ELEMENT METHOD;

CHARGE CONTROL METHOD; CIRCUIT SIMULATION; INTEGRATED GATE COMMUTATED THYRISTOR;

THYRISTORS;

EID: 0035156364     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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5. A systematic approach to modeling of semiconductors devices based on charge control principles
6. Physically based models of high power semiconductor devices for PSpice
7. Physically based models of high power semiconductors including transient thermal behavior
8. Physics-based models of power semiconductor devices for the circuit simulator SPICE