Gate-dependent magnetoresistance phenomena in carbon nanotubes

Physical Review Letters

Volumn 94, Issue 6, 2005, Pages

  Fedorov, G ^a   Lassagne, B ^a   Sagnes, M ^a   Raquet, B ^a   Broto, J M ^a   Triozon, F ^b   Roche, S ^b   Flahaut, E ^c  

^a GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^b CEA GRENOBLE   (France)

^c INSTITUT CARNOT CIRIMAT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD ORIENTATION; GATE-DEPENDENT MAGNETORESISTANCE; NANOTUBE-BASED DEVICES; QUANTIZATION;

ELECTRON TRANSITIONS; FERMI LEVEL; FUNCTIONS; MAGNETIC FIELDS; MAGNETORESISTANCE; SCANNING TUNNELING MICROSCOPY;

CARBON NANOTUBES;

EID: 18244387972     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.066801     Document Type: Article

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