Gate-Voltage Dependence of Zero-Bias Anomalies in Multiwall Carbon Nanotubes

Physical Review Letters

Volumn 92, Issue 3, 2004, Pages 368011-368014

  Kanda, Akinobu ^a   Tsukagoshi, Kazuhito ^b   Aoyagi, Yoshinobu ^c   Ootuka, Youiti ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; AMPLIFIERS (ELECTRONIC); COULOMB BLOCKADE; CRYOSTATS; DIFFUSION; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; MAGNETIC FIELD EFFECTS; QUANTUM THEORY; VANADIUM;

LUTTINGER-LIQUID (LL) THEORY; MULTIWALL CARBON NANOTUBES (MWNT); ZERO-BIAS ANOMALIES (ZBA);

CARBON NANOTUBES;

EID: 1442286473     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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