Defect evolution in 4H-SiC sublimation epi-layers grown on LPE buffers with reduced micropipe density

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Yakimova, R ^a   Syvajarvi M ^a   Jacobsson, H ^a   Kakanakova Georgieva, A ^a   Tuomi, T ^a   Rendakova, S ^a   Dmitriev, V ^a   Janzen E ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DISLOCATIONS (CRYSTALS); LIQUID PHASE EPITAXY; OPTICAL MICROSCOPY; REDUCTION; SCANNING ELECTRON MICROSCOPY; SUBLIMATION; SURFACE ROUGHNESS; SYNCHROTRON RADIATION; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

DEFECT EVOLUTION; MICROPIPE DENSITY; SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 18144433036     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)