Pinhole analysis in magnetic tunnel junctions

Applied Physics Letters

Volumn 76, Issue 5, 2000, Pages 607-609

  Schad, R ^a   Allen, D ^a   Zangari, Giovanni ^b   Zana, Iulica ^b   Yang, D ^a   Tondra, Mark ^c   Wang, Dexin ^c  

^a The University of Alabama   (United States)

^b University of Alabama   (United States)

^c NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001567502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125832     Document Type: Article

References (17)

1. M. Julliere, Phys. Lett. A 54A, 225 (1975).
2. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, Phys. Rev. Lett. 74, 3273 (1995).
3. S. Zhang, P. M. Levy, A. C. Marley, and S. S. P. Parkin, Phys. Rev. Lett. 79, 3744 (1997).
4. J. M. MacLaren, W. H. Butler, and X.-G. Zhang, J. Appl. Phys. 83, 6521 (1998).
5. J. Barnas, S. F. Lee, P. Holody, L. F. Schelp, F. Petroff, and A. Fert, Acta Phys. Pol. 93, 387 (1998).
6. J. M. Daughton, J. Appl. Phys. 81, 3758 (1997).
7. W. J. Gallagher, S. S. P. Parkin, Yu Lu, X. P. Bian, A. Marley, K. P. Roche, R. A. Altman, S. A. Rishton, C. Jahnes, and T. M. Shaw, J. Appl. Phys. 81, 3741 (1997).
8. M. Tondra, J. M. Daughton, D. Wang, R. S. Beech, A. Fink, and J. A. Taylor, J. Appl. Phys. 83, 6688 (1998).
9. S. S. P. Parkin, K. P. Roche, M. G. Smant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O'Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Y. Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, and W. J. Gallagher, J. Appl. Phys. 85, 5828 (1999).
10. V. da Costa, F. Bardou, C. Beal, Y. Henry, J. P. Bucher, and K. Ounadjela, J. Appl. Phys. 83, 6703 (1998).
11. G. A. Bassett, Philos. Mag. 3, 1042 (1958).
12. L. Piraux, J. M. George, J. F. Despres, C. Leroy, E. Ferain, R. Legras, K. Ounadjela, and A. Fert, Appl. Phys. Lett. 65, 2484 (1994); A. Blondel, J. P. Meier, B. Doudin, and J.-Ph. Ansermet, ibid. 65, 3019 (1994).
13. L. Piraux, J. M. George, J. F. Despres, C. Leroy, E. Ferain, R. Legras, K. Ounadjela, and A. Fert, Appl. Phys. Lett. 65, 2484 (1994); A. Blondel, J. P. Meier, B. Doudin, and J.-Ph. Ansermet, ibid. 65, 3019 (1994).
14. G. Zangari and D. N. Lambeth, IEEE Trans. Magn. 33, 3010 (1997); N. Tsuya, T. Tokushima, M. Shiraki, Y. Wakui, Y. Saito, H. Nakamura, S. Hayano, A. Furugori, and M. Tanaka, ibid. 22, 1140 (1986).
15. G. Zangari and D. N. Lambeth, IEEE Trans. Magn. 33, 3010 (1997); N. Tsuya, T. Tokushima, M. Shiraki, Y. Wakui, Y. Saito, H. Nakamura, S. Hayano, A. Furugori, and M. Tanaka, ibid. 22, 1140 (1986).
16. W. Oepts, H. J. Verhagen, W. J. M. de Jonge, and R. Coehoorn, Appl. Phys. Lett. 73, 2363 (1998).
17. 3 insulator layer due to charge transport by tunneling. The understanding of electrodeposition on thin insulators is not sufficiently developed to model our case but is the objective of active research on our part.