Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 145-149

  Martin, R W ^a   Edwards, P R ^a   Pecharroman Gallego, R ^a   Trager Cowan, C ^a   Kim, T ^a   Kim, H S ^a   Kim, K S ^a   Watson, I M ^a   Dawson, M D ^a   Krauss, T F ^b   Marsh, J H ^b   De La Rue, R M ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DIELECTRIC DEVICES; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON REFLECTION; GALLIUM NITRIDE; MASKS; MIRRORS; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DIELECTRIC MIRRORS; EMISSION ENERGY; LATERAL OVERGROWTH TECHNIQUES; MICROCAVITY;

SEMICONDUCTOR GROWTH;

EID: 0008946840     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<145::AID-PSSA145>3.0.CO;2-0     Document Type: Article

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