Spin-dependent electron transport at the ferromagnet/semiconductor interface

Journal of Applied Physics

Volumn 85, Issue 8 II B, 1999, Pages 5804-5806

  Hirohata, A ^a   Xu, Y B ^a   Guertler, C M ^a   Bland, J A C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); PHOTOCURRENTS; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

HYBRID SEMICONDUCTOR DEVICE STRUCTURES; SPIN POLARIZATION;

FERROMAGNETIC MATERIALS;

EID: 0032614116     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369925     Document Type: Article

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