MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As

Applied Surface Science

Volumn 159, Issue , 2000, Pages 308-312

  Ohno, Y ^a   Arata, I ^a   Matsukura, F ^a   Ohtani, K ^a   Wang, S ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; FERROMAGNETIC MATERIALS; LIGHT EMITTING DIODES; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

FERROMAGNETIC SEMICONDUCTORS; NONMAGNETIC SEMICONDUCTORS;

SEMICONDUCTOR JUNCTIONS;

EID: 0034206163     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00107-0     Document Type: Article

References (5)

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5. Matsukura F., Ohno H., Shen A., Sugawara Y. Phys. Rev. B. 57:1998;R2037.