Near-infrared to visible up-conversion in a forward-biased Schottky diode with a p-doped channel

Applied Physics Letters

Volumn 76, Issue 12, 2000, Pages 1507-1509

  Sandhu, J S ^a   Heberle, A P ^b   Alphenaar, B W ^b   Cleaver, J R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037480179     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126078     Document Type: Article

References (11)

1. Y. Mita, Appl. Phys. Lett. 39, 587 (1981).
2. Y. Wang and J. Ohwaki, J. Appl. Phys. 74, 1272 (1993).
3. J. Y. Allain, M. Monerie, and H. Poignant, Electron. Lett. 26, 261 (1990).
4. R. G. Smart, D. C. Hanna, and A. C. Tropper, Electron. Lett. 27, 1308 (1991).
5. S. G. Grubb, K. W. Bennett, R. S. Cannon, and W. F. Humer, Electron. Lett. 28, 1243 (1992).
6. E. H. Rhoderic and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988), pp. 41-42.
7. THe optical injection of electrons across a Schottky harrier also forms the basis of the metal-semiconductor near-infrared detector. See for example: J. Singh, Semiconductor Optoelectronics: Physics and Technology (McGraw-Hill, New York, 1995), pp. 381-382.
8. R. Braunstein, Phys. Rev. 125, 475 (1962).
9. C. C. Lee and H. Y. Fan, Phys. Rev. B 9, 3502 (1974).
10. J. S. Best, Appl. Phys. Lett. 34, 522 (1979).
11. B. H. Bransden and C. J. Joachain, Introduction to Quantum Mechanics (Longman Scientific & Technical, Harlow, 1989), pp. 388-405.