Potential of amorphous Mo-Si-N films for nanoelectronic applications

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 337-340

  Ylonen M ^a   Kattelus, H ^a   Savin, A ^b   Kivinen, P ^c   Haatainen, T ^a   Ahopelto, J ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b AALTO UNIVERSITY   (Finland)

^c UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

Amorphous metal films; Mictamict alloy; Mo Si N; Nanoscale wiring; Temperature coefficient of resistivity

Indexed keywords

COMPOSITION; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; SILICON; SPUTTERING; SURFACE ROUGHNESS;

NANOELECTRONICS;

AMORPHOUS FILMS;

EID: 17644441255     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00425-8     Document Type: Conference Paper

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