Fabrication and characterization of silicon-nanocrystal using platinum-nanomask

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 379-383

  Lee, Sejoon ^a   Shim, Young Suk ^a   Cho, Hoon Young ^a   Kang, Tae Won ^a   Kim, Deuk Young ^a   Lee, Youn Hwan ^b   Wang, Kang L ^c  

^a Dongguk University   (South Korea)

^b Dongguk University   (South Korea)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Cathodoluminescence; Flatband voltage shift; Platinum nanomask; Silicon nanocrystals

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CATHODOLUMINESCENCE; ELECTRIC POTENTIAL; ETCHING; HYSTERESIS; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

FLATBAND VOLTAGE SHIFT; PLATINUM-NANOMASKS; SILICON NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 17644435236     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.132     Document Type: Conference Paper

References (18)

1. Gravert H., Devoret M.H. Single Charge Tunneling. 1992;Plenum, New York.
2. Field M., Smith C.G., Pepper M., Brown K.M., Linfield E.H., Grimshaw M.P., Ritchie D.A., Jones G.A.C. Phys. Rev. Lett. 77:1996;350.
3. Ralph D.C., Black C.T., Tinkham M. Phys. Rev. Lett. 78:1997;4087.
4. Shirakashi J., Matsumoto K., Miura N., Konagi M. Appl. Phys. Lett. 72:1998;1893.
5. Matsumoto K., Gotoh Y., Maeda T., Dagata J.A., Harris J.S. Appl. Phys. Lett. 76:2000;239.
6. Leobandung E., Guo L., Wang Y., Chou S.Y. Appl. Phys. Lett. 67:1995;938.
7. Ishikuro H., Fujii T., Saraya T., Hashiguchi G., Hiramoto T., Ikoma T. Appl. Phys. Lett. 68:1996;3585.
8. Snow E.S., Cambell P.M. Appl. Phys. Lett. 64:1994;1932.
9. Matsumoto K., Ishii M., Segawa K., Oka Y., Vartanian B.J., Harris J.S. Appl. Phys. Lett. 68:1996;34.
10. Kim T.W., Kang S.O., Choo D.C., Shim J.H. Appl. Phys. Lett. 76:2000;1036.
11. Kolb D.M., Ullmann R., Will T. Science. 275:1997;1097.
12. Lohau J., Friedrichowski S., Dumpich G., Wassermann E.F., Winter M., Reetz M.T. J. Vac. Sci. Technol. B. 16:1998;77.
13. Smith H.I. J. Vac. Sci. Technol. B. 13:1995;2323.
14. Springholz G., Holy V., Pinczolits M., Bauer G. Science. 282:1998;734.
15. Ding S.A., Ikeda M., Fukuda M., Miyazaki S., Hirose M. Appl. Phys. Lett. 73:1998;3881.
16. Liu H.I., Biegelsen D.K., Ponce F.A., Johnson N.M., Pease R.F.W. Appl. Phys. Lett. 64:1994;1383.
17. Suzuki T., Sakai T., Zhang L., Nishiyama Y. Appl. Phys. Lett. 66:1995;215.
18. Lowe-Webb R.R., Lee H., Ewing J.B., Collins S.R., Yang W., Sercel P.C. J. Appl. Phys. 83:1998;2815.