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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 15, 2001, Pages 1553081-1553086

Surface photovoltage effects on p-GaAs (100) from core-level photoelectron spectroscopy using synchrotron radiation and a laser

(6) Tanaka, S a More, S D b Murakami, J c,e Itoh, M c Fujii, Y d Kamada, M a,b

a GRADUATE UNIVERSITY FOR ADVANCED STUDIES (Japan)

b INSTITUTE FOR MOLECULAR SCIENCE (Japan)

c SHINSHU UNIVERSITY (Japan)

d Osaka Prefecture University (Japan)

e FUJITSU LABORATORIES LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

ARTICLE; CALCULATION; ELECTRIC POTENTIAL; ELECTRON; ENERGY; LASER; MATHEMATICAL ANALYSIS; SPECTROSCOPY; SYNCHROTRON;

EID: 17644430424 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.64.155308 Document Type: Article

Times cited : (44)

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