Physics of high-intensity nanosecond electron source: Charge limit phenomenon in GaAs photocathodes

Journal of Applied Physics

Volumn 79, Issue 9, 1996, Pages 7318-7323

  Herrera Gomez A ^a,b,c   Verqara, G ^a,b,d   Spicer, W E ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c Lab de Invest en Materiales   (Mexico)

^d Ctro Invest y Desarrollo la Armada   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000184410     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361448     Document Type: Article

References (5)

1. P. Saez, R. Alley, H. Aoyagi, J. Clendenin, J. Frisch, C. Garden, E. Hoyt, R. Kirby, L. Klaisner, A. Kulikov, C. Prescott, D. Schultz, H. Tang, J. Turner, K. Witte, M. Woods, and M. Zolotorev, SPIE Proceedings 2022, 45 (1993).
2. R. Alley, H. Aoyagi, J. Clendenin, J. Frisch, C. Garden, E. Hoyt, R. Kirby, L. Klaisner, A. Kulikov, R. Miller, G. Mulhollan, C. Prescott, P. Saez, D. Schultz, H. Tang, J. Turner, K. Witte, M. Woods, A. D. Yeremian, and M. Zolotorev, SLAC-PUB-95-6489 (1995).
3. A. Herrera-Gomez and W. E. Spicer, SPIE Proceedings 2022, 51 (1993).
4. J. R. Lowney and H. S. Bennet, J. Appl. Phys. 69, 7102 (1991).
5. E. H. Rhoderick and R. H. Williams, Metal-Semiconductors Contact (Clarendon, Oxford, 1988), Chaps. 1 and 3, and Appendix A.