SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 454, Issue 1, 2000, Pages 161-165

Coadsorption of Cs and O on GaAs: Formation of negative electron affinity surfaces at different temperatures

(4) More S a Tanaka, S a,b Fujii, Y b Kamada, M a

a INSTITUTE FOR MOLECULAR SCIENCE (Japan)

b Osaka Prefecture University (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION ISOTHERMS; CESIUM; ELECTRIC POTENTIAL; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; GAS ADSORPTION; OXIDATION; OXYGEN; PHOTOEMISSION; SURFACE PHENOMENA; SYNCHROTRON RADIATION;

PHOTOELECTRON EMISSION; WORK FUNCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033689596 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(00)00171-0 Document Type: Article

Times cited : (17)

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