SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 454, Issue 1, 2000, Pages 525-528

Photo-induced change of the semiconductor-vacuum interface of p-GaAs(100) studied by photoelectron spectroscopy

(6) Kamada, M a Murakami, J b Tanaka, S c More, S D a Itoh, M b Fujii, Y c

a INSTITUTE FOR MOLECULAR SCIENCE (Japan)

b SHINSHU UNIVERSITY (Japan)

c Osaka Prefecture University (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM; INTERFACES (MATERIALS); NEODYMIUM LASERS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PHOTONS; SURFACE PHENOMENA; SYNCHROTRON RADIATION; VACUUM;

SURFACE PHOTOVOLTAGE; TRANSIENT ENERGY SHIFTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033691778 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(00)00263-6 Document Type: Article

Times cited : (13)

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