Effect of dispersant addition during ceria abrasive milling process on light point defect (LPD) formation after shallow trench isolation chemical mechanical polishing (STI-CMP)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Kang, Hyun Goo ^a   Katoh, Takeo ^a   Kim, Dae Hyung ^b   Paik, Ungyu ^a   Park, Jea Gun ^a  

^a Hanyang University   (South Korea)

^b K C Technol Inc   (South Korea)

Author keywords

Abrasive; CMP; Dispersant; Light point defect (lPD); Milling; Oxide film; Shallow trench isolation; Slurry

Indexed keywords

ABRASIVES; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; COMMINUTION; DISPERSIONS; PARTICLE SIZE ANALYSIS; POINT DEFECTS; SLURRIES; ULTRASONIC APPLICATIONS;

DISPERSANTS; LIGHT POINT DEFECTS (LPD); OXIDE FILMS; SHALLOW TRENCH ISOLATION (STI);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 17444416495     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L238     Document Type: Article

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