Understanding degradation and breakdown of SiO 2 gate dielectric with "negative Hubbard U" dangling bonds

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2490-2494

  Karp, James ^a   Gitlin, Daniel ^a   Jeong, Steve ^a   Moyzhes, Boris ^b  

^a XILINX INC   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SOLIDS; GATE DIELECTRICS;

AMORPHOUS SILICON; CHEMICAL BONDS; DEGRADATION; DIAMAGNETIC MATERIALS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRON MOBILITY; GATES (TRANSISTOR); HEAT LOSSES; HOLE MOBILITY;

SILICA;

EID: 1642280341     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1643773     Document Type: Article

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