Dangling bonds with "negative Hubbard U": Physical model for degradation of SiO2 gate dielectric under voltage stress

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7257-7260

  Gitlin, Daniel ^a   Karp, James ^a   Moyzhes, Boris ^b  

^a XILINX INC   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; HOLE MOBILITY; SILICA; STRESSES; THERMAL EFFECTS;

DANGLING BONDS;

GATES (TRANSISTOR);

EID: 0037115682     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1518163     Document Type: Article

References (16)

1. E.M. Vogel, M.D. Edelstain, and J.S. Suehle, J. Appl. Phys. 90, 2338 (2001).
2. D.J. DiMaria and J.H. Stathis, J. Appl. Phys. 89, 5015 (2001).
3. R. Degraeve, G. Groeseneken, R. Bellens, J.L. Ogier, M. Depas, Ph. Roussel, and H.E. Maes, IEEE Trans. Electron Devices 45, 904 (1998).
4. K.F. Schuegraf and C. Hu, J. Appl. Phys. 76, 3695 (1994).
5. P.W. Anderson, Phys. Rev. Lett. 34, 953 (1975).
6. N. Mott, Rev. Mod. Phys. 50, 2 (1978).
7. N.F. Mott and E.A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon, Oxford, 1979).
8. T. Hori, Gate Dielectrics and MOS ULSIs (Springer, Berlin, 1997), and references therein.
9. S.-H. Lee, B.-J. Cho, J.-Ch. Kim, and S.-H. Choi, Tech. Dig. - Int. Electron Devices Meet. 1994, 605.
10. N.W. Ashcroft and N. David Mermin, Solid State Physics (Saunders College, Philadelphia, PA, 1976), p. 19105.
11. G. Koster, Th.H. Geballe, and B. Moyzes, Phys. Rev. B (to be published).
12. J. Robertson, MRS Bull. 27, 217 (2002).
13. S.K. Lai, J. Appl. Phys. 54, 2540 (1984).
14. K. Morigaki Physics of Amorphous Semiconductors (Imperial College Press, London, 1999).
15. D.G. Schlom and J.H. Haeni, MRS Bull. 27, 198 (2002).
16. I.C. Chen, S. Holland, and C. Hu, Tech. Dig. - Int. Electron Devices Meet. 1986, 660.