Thermodynamic analysis of hole trapping in SiO2 films on silicon

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 165-168

  Boureau, G ^a   Carniato, S ^a   Capron, N ^a   Garapon, J ^b,c   Poumellec, B ^b  

^a Université Pierre et Marie Curie   (France)

^b UNIVERSITÉ PARIS SUD   (France)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000884348     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1329142     Document Type: Article

References (34)

1. R. A. Weeks and C. M. Nelson, J. Am. Ceram. Soc. 43, 396 (1960).
2. R. H. Silbee, J. Appl. Phys. 32, 1456 (1961).
3. F. J. Feigl and J. H. Anderson, J. Phys. Chem. Solids 31, 31 (1970).
4. P. M. Lenahan and J. F. Conley, J. Vac. Sci. Technol. B 16, 2134 (1998).
5. R. A. B. Devine, Appl. Phys. Lett. 68, 3108 (1996).
6. K. T. Queeney et al., J. Appl. Phys. 87, 1322 (2000).
7. M. H. Wood and R. Williams, J. Appl. Phys. 47, 1082 (1976).
8. A. Chu and W. B. Fowler, Phys. Rev. B 41, 5061 (1990).
9. S. Carniato, G. Boureau, and J. Harding, Philos. Mag. A 75, 1435 (1997).
10. J. K. Rudra and W. B. Fowler, Phys. Rev. B 35, 8223 (1987).
11. K. C. Snyder and W. B. Fowler, Phys. Rev. B 48, 13238 (1993).
12. W. L. Warren et al., Appl. Phys. Lett. 64, 3452 (1990).
13. T. Ohmameuda, H. Miki, K. Asada, T. Sugano, and Y. Ohji, Jpn. J. Appl. Phys., Part 2 30, L1993 (1991).
14. P. M. Lenahan, J. F. Conley, and B. D. Wallace, J. Appl. Phys. 81, 6822 (1997).
15. P. M. Lenahan and J. F. Conley, J. Appl. Phys. 83, 5593 (1998).
16. R. A. B. Devine, W. L. Warren, and S. Karma, J. Appl. Phys. 83, 5591 (1998).
17. 2, edited by R. A. B. Devine (Plenum, New York, 1988), p. 125.
18. CODATA recommended Key values for thermodynamics, J. Chem. Thermodyn. 8, 603 (1976).
19. 2, edited by R. A. B. Devine (Plenum, New York, 1988), p. 113.
20. V. B. Sulimov, C. Pisani, F. Cora, and V. O. Sokolov, Solid State Commun. 90, 511 (1994).
21. G. Pacchioni and G. Ieranò, Phys. Rev. B 56, 7304 (1997).
22. V. Sulimov, S. Casassa, C. Pisani, J. Garapon, and B. Poumellec, Modell. Simul. Mater. Sci. Eng. 8, 763 (2000).
23. A. Bennett and L. Roth, J. Phys. Chem. Solids 32, 1251 (1971).
24. D. Allan and M. Teter, J. Am. Ceram. Soc. 73, 3247 (1990).
25. C. Carbonaro, V. Fiorentini, and S. Massidda, J. Non-Cryst. Solids 221, 89 (1997).
26. N. Capron, S. Carniato, A. Lagraa, G. Boureau, and A. Pasturel, J. Chem. Phys. 112, 9543 (2000).
27. G. Boureau and S. Carniato, Solid State Commun. 98, 485 (1996); 99, i (1996).
28. G. Boureau and S. Carniato, Solid State Commun. 98, 485 (1996); 99, i (1996).
29. G. Boureau and P. Gerdanian, Acta Metall. 24, 717 (1976).
30. R. Craven, in Semiconductor Silicon, edited by H. Huff (The Electrochemical Society, Pennington, New Jersey, 1981), p. 601.
31. J. C. Mikkelsen, Mater. Res. Soc. Symp. Proc. 59, 59 (1986).
32. Y. Itoh and T. Nozak, Jpn. J. Appl. Phys. 24, 279 (1985).
33. W. Wijaranakula, Appl. Phys. Lett. 59, 1185 (1991).
34. R. Tétot, C. Picard, and P. Gerdanian, J. Phys. Chem. Solids 44, 1059 (1983).