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Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 69-74

Sulphur doping of GaSb grown by atmospheric pressure MOVPE

(5) Novak J a Hasenohrl S a Kucera M a Hjelt, K b Tuomi, T b

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b AALTO UNIVERSITY (Finland)

Author keywords

Epitaxial growth; MOVPE; Sulphur doping

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; HYDROGEN SULFIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SUBSTRATES; SULFUR;

SEMICONDUCTING GALLIUM ANTIMONIDE; TRIMETHYLANTIMONY; TRIMETHYLGALLIUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031649504 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00396-5 Document Type: Article

Times cited : (3)

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