Polyhedral oligomeric silsesquioxane (POSS) acrylate copolymers for microfabrication: Properties and formulation of resist materials

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 238-243

  Tegou, E ^a   Bellas, V ^a   Gogolides, E ^a   Argitis, P ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

157 nm lithography; POSS; Resists; Silsesquioxanes

Indexed keywords

COPOLYMERS; LITHOGRAPHY; MONOMERS; OLIGOMERS; OPTIMIZATION; OXYGEN; PHOTORESISTS; PLASMA APPLICATIONS; POLYMERIZATION;

MICROFLUIDIC DEVICES; OXYGEN PLASMA RESISTANCE; POLYHEDRAL OLIGOMERIC SILSESQUIOXANE (POSS);

MICROELECTRONICS;

EID: 17344377489     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00105-4     Document Type: Conference Paper

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