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Volumn 26, Issue 3, 2005, Pages 460-464

Peculiar photoconduction in semi-insulating GaAs photoconductive switch triggered by 1064 nm laser pulse

Author keywords

EL2 deep level; Photoconductive switch; Semi insulating GaAs

Indexed keywords

LASER PULSES; RADAR; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SWITCHES;

EID: 17244367924     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (14)

References (14)
  • 1
    • 0032487238 scopus 로고    scopus 로고
    • Characterization of a semi-insulating GaAs photoconductive semiconductor switch for ultrawide band high power microwave application
    • Islam N E, Schamiloglu E, Fleddermann C B. Characterization of a semi-insulating GaAs photoconductive semiconductor switch for ultrawide band high power microwave application. Appl Phys Lett, 1998, 73(14): 1988
    • (1998) Appl Phys Lett , vol.73 , Issue.14 , pp. 1988
    • Islam, N.E.1    Schamiloglu, E.2    Fleddermann, C.B.3
  • 2
    • 0034182263 scopus 로고    scopus 로고
    • Transit properties of high power ultrafast photoconductive semiconductor switches
    • Shi Wei, Zhao Wei. Transit properties of high power ultrafast photoconductive semiconductor switches. Chinese Journal of Semiconductors, 2000, 21(5): 421
    • (2000) Chinese Journal of Semiconductors , vol.21 , Issue.5 , pp. 421
    • Shi, W.1    Zhao, W.2
  • 3
    • 0035741514 scopus 로고    scopus 로고
    • Optically activated charge domain model for high-gain GaAs photoconductive switches
    • Shi Wei. Optically activated charge domain model for high-gain GaAs photoconductive switches. Chinese Journal of Semiconductors, 2001, 22(12): 1481
    • (2001) Chinese Journal of Semiconductors , vol.22 , Issue.12 , pp. 1481
    • Shi, W.1
  • 4
    • 0013431982 scopus 로고
    • Evaluation of transport effects on the performance of a laser-controlled GaAs switch
    • Mazzola M S, Roush R A, Stoudt D C, et al. Evaluation of transport effects on the performance of a laser-controlled GaAs switch. IEEE Pulsed Power Conf, 1991: 114
    • (1991) IEEE Pulsed Power Conf , pp. 114
    • Mazzola, M.S.1    Roush, R.A.2    Stoudt, D.C.3
  • 6
    • 0025720408 scopus 로고
    • Triggering GaAs lock - On switches with laser diode arrays
    • Loubriel G M, Buttram M T, Helgeson W D, et al. Triggering GaAs lock-on switches with laser diode arrays. SPIE Proc, 1990, 1378: 179
    • (1990) SPIE Proc , vol.1378 , pp. 179
    • Loubriel, G.M.1    Buttram, M.T.2    Helgeson, W.D.3
  • 7
    • 0032658737 scopus 로고    scopus 로고
    • Optically activated charge domain phenomena in high gain ultra fast high voltage GaAs photoconductive switches
    • Chinese source
    • Shi Wei, Liang Zhenxian. Optically activated charge domain phenomena in high gain ultra fast high voltage GaAs photoconductive switches. Chinese Journal of Semiconductors, 1999, 20(1): 53 (in Chinese)
    • (1999) Chinese Journal of Semiconductors , vol.20 , Issue.1 , pp. 53
    • Shi, W.1    Liang, Z.2
  • 8
    • 0345795427 scopus 로고    scopus 로고
    • Investigation of high power sub-nanosecond GaAs photoconductive switches
    • Chinese source
    • Shi Wei, Zhao Wei, Zhang Xianbin, et al. Investigation of high power sub-nanosecond GaAs photoconductive switches. Acta Physica Sinica, 2002, 4(51): 867 (in Chinese)
    • (2002) Acta Physica Sinica , vol.4 , Issue.51 , pp. 867
    • Shi, W.1    Zhao, W.2    Zhang, X.3
  • 9
    • 0004995184 scopus 로고
    • Observation of the second engergy level of the EL2 defect in GaAs by the infrared absorption technique
    • Manaserh M O, Mitchel W C, Fischer D W. Observation of the second engergy level of the EL2 defect in GaAs by the infrared absorption technique. Appl Phys Lett, 1989, 55(9): 864
    • (1989) Appl Phys Lett , vol.55 , Issue.9 , pp. 864
    • Manaserh, M.O.1    Mitchel, W.C.2    Fischer, D.W.3
  • 10
    • 0004710631 scopus 로고    scopus 로고
    • Detection of the metastable state of the EL2 defect in GaAs
    • Bourgoin J C, Neffati T. Detection of the metastable state of the EL2 defect in GaAs. J Appl Phys, 1997, 82(8): 4124
    • (1997) J Appl Phys , vol.82 , Issue.8 , pp. 4124
    • Bourgoin, J.C.1    Neffati, T.2
  • 11
    • 0036004631 scopus 로고    scopus 로고
    • Investigation of light absorption mechanisms in SI-GaAs switch photoconductive triggered by 1064 nm laser pulse
    • Shi Wei, Zhang Xianbin, Li Qi, et al. Investigation of light absorption mechanisms in SI-GaAs switch photoconductive triggered by 1064 nm laser pulse. Chinese Physics Letters, 2002, 19(3): 351
    • (2002) Chinese Physics Letters , vol.19 , Issue.3 , pp. 351
    • Shi, W.1    Zhang, X.2    Li, Q.3
  • 12
    • 0036677760 scopus 로고    scopus 로고
    • Monople charge domain in high-gain gallium arsenide photoconductive switches
    • Shi Wei, Chen Erzhu, Zhang Xianbin, et al. Monople charge domain in high-gain gallium arsenide photoconductive switches. Chinese Physics Letters, 2002, 19(8): 1119
    • (2002) Chinese Physics Letters , vol.19 , Issue.8 , pp. 1119
    • Shi, W.1    Chen, E.2    Zhang, X.3
  • 13
    • 13644273845 scopus 로고    scopus 로고
    • Photon-activated charge domain in high-gain photoconductive switches
    • Shi Wei, Dai Huiying, Sun Xiaowei. Photon-activated charge domain in high-gain photoconductive switches. Chinese Optics Letters, 2003, 1(9): 553
    • (2003) Chinese Optics Letters , vol.1 , Issue.9 , pp. 553
    • Shi, W.1    Dai, H.2    Sun, X.3
  • 14
    • 1542503071 scopus 로고    scopus 로고
    • Investigation of GaAs photoconductive switch irradiated by 1553 nm laser pulse
    • Shi Wei, Jia Wanli. Investigation of GaAs photoconductive switch irradiated by 1553 nm laser pulse. Chinese Journal of Semiconductors, 2003, 24(10): 1016
    • (2003) Chinese Journal of Semiconductors , vol.24 , Issue.10 , pp. 1016
    • Shi, W.1    Jia, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.