Optically activated charge domain model for high-gain GaAs photoconductive switches

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 12, 2001, Pages 1481-1485

  Shi, Wei ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

High gain mode; Optically activated charge domain; Photoconductive switches

Indexed keywords

NONLINEAR EQUATIONS; OPTICAL SWITCHES; PHOTOCONDUCTING DEVICES;

HIGH GRAIN MODE; OPTICALLY ACTIVATED CHARGE DOMAIN;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035741514     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Photoconductive semiconductor switches
2. Transit properties of high power ultra-fast photoconductive semiconductor switch
3. Fabrication and characterization of a high-voltage ultra-fast GaAs photoconductive switch
4. Optically activated charge domain phenomena in high gain ultra fast high voltage GaAs photoconductive switches
5. Avalanche injection model for lock-on effect in III-V power photoconductive switches
6. Optical and Electrical physics foundation