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Volumn 24, Issue 10, 2003, Pages 1016-1020

Investigation of GaAs photoconductive switch irradiated by 1553 nm laser pulse

Author keywords

EL2 deep level; Photoconductive switch; Semi insulating GaAs

Indexed keywords

IRRADIATION; PHOTOCONDUCTIVITY; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1542503071     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (10)
  • 2
    • 0000239701 scopus 로고
    • Avalanche injection model for lock-on effect in III-V power photoconductive switches
    • Zhao H, Hadizad P, Hur J H, et al. Avalanche injection model for lock-on effect in III-V power photoconductive switches. J Appl Phys, 1993, 73(4): 1807
    • (1993) J. Appl. Phys. , vol.73 , Issue.4 , pp. 1807
    • Zhao, H.1    Hadizad, P.2    Hur, J.H.3
  • 3
    • 0035741514 scopus 로고    scopus 로고
    • Optical activated charge domain model for high-gain GaAs photoconductive switches
    • Shi Wei. Optical activated charge domain model for high-gain GaAs photoconductive switches. Chinese Journal of Semiconductors, 2001, 22(12): 1481
    • (2001) Chinese Journal of Semiconductors , vol.22 , Issue.12 , pp. 1481
    • Shi, W.1
  • 4
    • 0034182263 scopus 로고    scopus 로고
    • Transit properties of high power ultra-fast photoconductive semiconductor switch
    • Shi Wei, Zhao Wei, Sun Xiaowei, et al. Transit properties of high power ultra-fast photoconductive semiconductor switch. Chinese Journal of Semiconductors, 2000, 21(5): 421
    • (2000) Chinese Journal of Semiconductors , vol.21 , Issue.5 , pp. 421
    • Shi, W.1    Zhao, W.2    Sun, X.3
  • 5
    • 0032314182 scopus 로고    scopus 로고
    • Fabrication and characterization of a high-voltage ultra-fast GaAs photoconductive switch
    • Shi Wei, Liang Zhenxian, Feng Jun, et al. Fabrication and characterization of a high-voltage ultra-fast GaAs photoconductive switch. Chinese Journal of Semiconductors, 1998, 19(6): 437
    • (1998) Chinese Journal of Semiconductors , vol.19 , Issue.6 , pp. 437
    • Shi, W.1    Liang, Z.2    Feng, J.3
  • 7
    • 0036004631 scopus 로고    scopus 로고
    • High gain lateral semi-insulating GaAs photoconductive switches triggered by 1064 nm laser pulse
    • Shi Wei, Zhang Xianbin, Li Qi, et al. High gain lateral semi-insulating GaAs photoconductive switches triggered by 1064 nm laser pulse. Chin Phys Lett, 2002, 19(3): 351
    • (2002) Chin. Phys. Lett. , vol.19 , Issue.3 , pp. 351
    • Shi, W.1    Zhang, X.2    Li, Q.3
  • 8
    • 0009504379 scopus 로고
    • Chinese source, Chengdu: Press of University of Electronics Science and Technology of China
    • Jiang Jiejian. Optical and electrical physics foundation. Chengdu: Press of University of Electronics Science and Technology of China, 1986: 18 (in Chinese)
    • (1986) Optical and Electrical Physics Foundation , pp. 18
    • Jiang, J.1
  • 9
    • 0034198091 scopus 로고    scopus 로고
    • Study of a passively Q-switched Nd:YAG laser with GaAs
    • Chinese source
    • Li Ping, Wang Qingpu, Gao Da, et al. Study of a passively Q-switched Nd:YAG laser with GaAs. Acta Optica Sinica, 2000, 20(6): 744 (in Chinese)
    • (2000) Acta Optica Sinica , vol.20 , Issue.6 , pp. 744
    • Li, P.1    Wang, Q.2    Gao, D.3
  • 10
    • 0032315368 scopus 로고    scopus 로고
    • Double donor behavior of EL2 defect in photoquenching experiment
    • Zhou Bin, Yang Xiquan, Wang Zhanguo. Double donor behavior of EL2 defect in photoquenching experiment. Chinese Rare Metals, 1998, 17(2): 129
    • (1998) Chinese Rare Metals , vol.17 , Issue.2 , pp. 129
    • Zhou, B.1    Yang, X.2    Wang, Z.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.