High gain lateral semi-insulating GaAs photoconductive switch triggered by 1064 nm laser pulses

Chinese Physics Letters

Volumn 19, Issue 3, 2002, Pages 351-354

  Shi, Wei ^a   Zhang, Xian Bin ^a   Li, Qi ^a   Chen, Er Zhu ^a   Zhao, Wei ^b  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b XI AN INSTITUTE OF OPTICS AND PRECISION MECHANICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; INSULATION; LASER PULSES; NONLINEAR OPTICS; PHOTOCONDUCTIVE SWITCHES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM;

1064 NM LASERS; ABSORPTION EDGES; ENERGY; GAAS PHOTOCONDUCTIVE SWITCH; HIGH GAIN; LIGHT PULSE; LINEAR MODES; NONLINEAR MODE; SEMI-INSULATING GAAS; TWO ELECTRODES;

III-V SEMICONDUCTORS;

EID: 0036004631     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/19/3/320     Document Type: Article

References (15)