Electrically programmable fuse (eFUSE) using electromigration in silicides

IEEE Electron Device Letters

Volumn 23, Issue 9, 2002, Pages 523-525

  Kothandaraman, C ^b   Iyer, Sundar K ^a,c   Iyer, Subramanian S ^a,c  

^a IEEE

^b INFINEON TECHNOLOGIES   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

CMOS integrated circuits; DRAM chips; Electromigration; Fuses; Redundancy; Tuning

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER PROGRAMMING; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTROMIGRATION; ENERGY DISPERSIVE SPECTROSCOPY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HEATING; POLYSILICON; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY;

ELECTRICALLY PROGRAMMABLE FUSE DEVICES (EFUSE); LASER-FUSES;

ELECTRIC FUSES;

EID: 0036714040     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.802657     Document Type: Article

References (4)

1. 2Si contacts on Si
2. A PROM element based on salicide agglomeration of poly fuses in a CMOS logic process
3. Formation and stability of silicides in polycrystalline silicon
4. Grain growth study in aluminum films and electromigration implications