TEM study of electron beam-induced crystallization of amorphous GeSi films

Philosophical Magazine Letters

Volumn 84, Issue 11, 2004, Pages 719-728

  Xu, Z W ^a   Ngan, A H W ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DENSITY (SPECIFIC GRAVITY); ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRON IRRADIATION; FAST FOURIER TRANSFORMS; GERMANIUM COMPOUNDS; MOLECULAR STRUCTURE; PHASE TRANSITIONS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM-INDUCED CRYSTALLIZATION; HIGH-DENSITY ELECTRON BEAMS; LOW-DENSITY ELECTRON BEAMS; PHASE CHANGES;

AMORPHOUS FILMS;

EID: 17044371872     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: 10.1080/14786430500038088     Document Type: Article

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