Erbium in silicon: Problems and challenges

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 197-206

  Binetti, S ^a   Donghi, M ^a   Pizzini, S ^a   Castaldini, A ^a   Cavallini, A ^a   Fraboni, B ^a   Sobolev, N A ^b  

^a INFM   (Italy)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

DLTS; Light emitting structures; LPE; Photoluminescence; Si:er

Indexed keywords

CHEMICAL BONDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ERBIUM; HEAT TREATMENT; LIQUID PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; DEFECTS; ERBIUM COMPOUNDS; INDUCED CURRENTS; OPTICAL MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

LIGHT BEAM INDUCED CURRENT (LBIC);

SEMICONDUCTING SILICON; OPTICAL PROPERTIES;

AS-GROWN; ER-O BONDS; IMPLANTED SAMPLES; LIGHT BEAM INDUCED CURRENTS; LIGHT-EMITTING STRUCTURES; LIQUID SOLUTION; OPTICAL ACTIVITY; PROBLEMS AND CHALLENGES;

EID: 16944362565     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.197     Document Type: Article

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