Erbium doped silicon for light emitting devices

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 317-324

  Michel, J ^a   Zheng, B ^a   Palm, J ^a   Ouellette, E ^a   Gan, F ^a   Kimerling, L C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; ENERGY TRANSFER; ION IMPLANTATION; LIGHT EMITTING DIODES; LUMINESCENCE OF INORGANIC SOLIDS; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON;

DE-EXCITATION; ERBIUM DOPED SILICON; PHONON MEDIATED BACKTRANSFER;

ERBIUM;

EID: 0030398730     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-317     Document Type: Conference Paper

References (11)