Properties of ion implanted and UHV-CVD grown Si:Er

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 41-46

  Morse, M ^a   Zheng, B ^a   Palm, J ^a   Duan, X ^a   Kimerling, L C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ERBIUM COMPOUNDS; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANOMETALLICS; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; VACUUM APPLICATIONS;

METALLORGANIC PRECURSORS; SPREADING RESISTANCE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

ERBIUM;

EID: 0030400696     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-41     Document Type: Conference Paper

References (10)