Low energy nitrogen implantation into Si and SiO2/Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 694-698

  Krug, C ^a   Salgado, T D M ^a   Stedile, F C ^a   Baumvol, I J R ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Gate dielectric; Low energy ion implantation; Silicon oxynitride

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

GATE DIELECTRICS; MEDIUM ENERGY ION SCATTERING (MEIS); NUCLEAR REACTION ANALYSIS (NRA);

SEMICONDUCTING FILMS;

EID: 16744362997     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00563-2     Document Type: Conference Paper

References (10)