Properties of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

Solid State Communications

Volumn 130, Issue 5, 2004, Pages 363-366

  Zhu, Jun ^a,b   Mao, Xianf Yu ^a   Chen, Xiao Bing ^a,b  

^a YANGZHOU UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

A. Ferroelectrics; B. Solid state reaction; C. X ray diffraction; D. Electric breakdown voltage; D. Remnant polarization

Indexed keywords

CRYSTAL STRUCTURE; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC FIELDS; POLARIZATION; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS; THERMODYNAMIC STABILITY; VANADIUM; X RAY DIFFRACTION;

ELECTRIC BREAKDOWN VOLTAGE; REMNANT POLARIZATION; SOLID STATE REACTION;

FERROELECTRIC CERAMICS;

EID: 1642634495     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.01.047     Document Type: Article

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