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Volumn 762, Issue , 2003, Pages 643-648

Deposition of device quality μc-Si films and solar cells at high rates by HWCVD in a W filament regime where W/Si formation is minimal

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISSOCIATION; ENERGY GAP; FILM GROWTH; INFRARED SPECTROSCOPY; LOW TEMPERATURE EFFECTS; SOLAR CELLS; SUBSTRATES; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION;

EID: 1642500368     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a6.9     Document Type: Conference Paper
Times cited : (1)

References (14)
  • 5
    • 85085783704 scopus 로고    scopus 로고
    • st International Conference on Cat-CVD (Hot-Wire CVD) Process
    • st International Conference on Cat-CVD (Hot-Wire CVD) Process', published in Thin Solid Films 395 (2001).
    • (2001) Thin Solid Films , vol.395
  • 12
    • 1642425443 scopus 로고    scopus 로고
    • private communication
    • A. H. Mahan, private communication.
    • Mahan, A.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.